STB11N52K3, STF11N52K3 STP11N52K3 N-channel 525 V, 0.41 , 10 A SuperMESH3 Power MOSFET in DPAK,TO-220FP and TO-220 packages Datasheet production data Features TAB R DS(on) Order codes V I P DSS D w max. STB11N52K3 125 W 3 3 2 2 1 1 STF11N52K3 525 V < 0.51 10 A 30 W TO-220 TO-220FP STP11N52K3 125 W TAB 100% avalanche tested Extremely high dv/dt capability 3 1 Gate charge minimized DPAK Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. Internal schematic diagram D(2,TAB) Applications Switching applications Description G(1) These devices are N-channel Power MOSFETs made using the SuperMESH3 technology that is obtained via improvements applied to STMicroelectronics SuperMESH technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on S(3) resistance, superior dynamic performance and AM01476v1 high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Order codes Marking Packages Packaging STB11N52K3 DPAK Tape and reel STF11N52K3 11N52K3 TO-220FP Tube STP11N52K3 TO-220 Tube March 2012 Doc ID 018868 Rev 2 1/20 This is information on a product in full production. www.st.com 20Contents STB11N52K3, STF11N52K3, STP11N52K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Package mechanical data 17 6 Revision history . 19 2/20 Doc ID 018868 Rev 2