X-On Electronics has gained recognition as a prominent supplier of STB11N52K3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB11N52K3 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB11N52K3 STMicroelectronics

STB11N52K3 electronic component of STMicroelectronics
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Part No.STB11N52K3
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 525 V 0.41 Ohm 10 A SuperMESH3
Datasheet: STB11N52K3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
257: USD 0.4725 ea
Line Total: USD 121.43 
Availability - 935
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ: 257  Multiples: 1
Pack Size: 1
Availability Price Quantity
935
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 257
Multiples : 1
257 : USD 0.4725

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
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We are delighted to provide the STB11N52K3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB11N52K3 and other electronic components in the MOSFETs category and beyond.

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STB11N52K3, STF11N52K3 STP11N52K3 N-channel 525 V, 0.41 , 10 A SuperMESH3 Power MOSFET in DPAK,TO-220FP and TO-220 packages Datasheet production data Features TAB R DS(on) Order codes V I P DSS D w max. STB11N52K3 125 W 3 3 2 2 1 1 STF11N52K3 525 V < 0.51 10 A 30 W TO-220 TO-220FP STP11N52K3 125 W TAB 100% avalanche tested Extremely high dv/dt capability 3 1 Gate charge minimized DPAK Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. Internal schematic diagram D(2,TAB) Applications Switching applications Description G(1) These devices are N-channel Power MOSFETs made using the SuperMESH3 technology that is obtained via improvements applied to STMicroelectronics SuperMESH technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on S(3) resistance, superior dynamic performance and AM01476v1 high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Order codes Marking Packages Packaging STB11N52K3 DPAK Tape and reel STF11N52K3 11N52K3 TO-220FP Tube STP11N52K3 TO-220 Tube March 2012 Doc ID 018868 Rev 2 1/20 This is information on a product in full production. www.st.com 20Contents STB11N52K3, STF11N52K3, STP11N52K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Package mechanical data 17 6 Revision history . 19 2/20 Doc ID 018868 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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