X-On Electronics has gained recognition as a prominent supplier of STB120N4LF6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB120N4LF6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB120N4LF6 STMicroelectronics

Name: STB120N4LF6
Brand: STMicroelectronics
SKU: STB120N4LF6_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STB120N4LF6 electronic component of STMicroelectronics

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Part No.	STB120N4LF6
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N-Ch 40V 3.1 Ohm STripFET VI DeepGATE
Datasheet:	STB120N4LF6 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 1.3541 ea
Line Total: USD 1354.1

Availability - 0

MOQ: 1000 Multiples: 1000
Pack Size: 1000

STB120N4LF6 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 12 Mar to Tue. 18 Mar MOQ : 1000 Multiples : 1000	1000 : USD 1.3541 2000 : USD 1.3138

0 Ship by Mon. 10 Mar to Wed. 12 Mar MOQ : 1 Multiples : 1	1 : USD 7.6209 10 : USD 2.7475 25 : USD 2.5971 100 : USD 2.206

0 Ship by Wed. 12 Mar to Tue. 18 Mar MOQ : 25 Multiples : 1	25 : USD 1.6495

We are delighted to provide the STB120N4LF6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB120N4LF6 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STB120N4LF6 STD120N4LF6 N-channel 40 V, 3.1 m, 80 A DPAK, DPAK STripFET VI DeepGATE Power MOSFET Features Order codes V R max I DSS DS(on) D STB120N4LF6 40 V 4.0 m 80 A STD120N4LF6 40 V 4.0 m 80 A 3 3 1 1 Logic level drive DPAK DPAK 100% avalanche tested Application Switching applications Automotive Figure 1. Internal schematic diagram Description This product is a 40 V N-channel STripFET VI Power MOSFET based on the STs proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order codes Marking Packages Packaging STB120N4LF6 DPAK 120N4LF6 Tape and reel STD120N4LF6 DPAK February 2011 Doc ID 16919 Rev 2 1/18 www.st.com 18 Contents STB120N4LF6, STD120N4LF6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 18 2/18 Doc ID 16919 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 80 A 80 A
Vds - Drain-Source Breakdown Voltage 40 V 40 V
Rds On - Drain-Source Resistance 4 mOhms 4 mOhms
Transistor Polarity n - channel n - channel
Vgs th - Gate-Source Threshold Voltage 2.5 V 2.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 110 W 110 W
Mounting Style smd/smt smd/smt
Package / Case D2PAK D2PAK
Packaging Reel Reel
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 80 nC 80 nC
Qualification aec - q101 aec - q101
Tradename stripfet stripfet
Configuration single single
Series stb120n4lf6 stb120n4lf6
Brand Stmicroelectronics Stmicroelectronics
Continuous Drain Current 80 A 80 A
Drain-Source Breakdown Voltage 40 V 40 V
Power Dissipation 110 W 110 W
Rds On 4 mohms 4 mohms
Gate Charge Qg 80 nC 80 nC
Factory Pack Quantity : 1000 1000
Transistor Type 1 n - channel 1 n - channel
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075
Mxhts 85412101 85412101
Product Type mosfet mosfet
Subcategory Mosfets Mosfets
Taric 8541210000 8541210000