X-On Electronics has gained recognition as a prominent supplier of STB18N60DM2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB18N60DM2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB18N60DM2 STMicroelectronics

STB18N60DM2 electronic component of STMicroelectronics
STB18N60DM2 STMicroelectronics
STB18N60DM2 MOSFETs
STB18N60DM2  Semiconductors

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See Product Specifications
Part No. STB18N60DM2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; D2PAK
Datasheet: STB18N60DM2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 1.088 ea
Line Total: USD 1088 
Availability - 7760
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
7760
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 1000
Multiples : 1000
1000 : USD 1.088
2000 : USD 1.0824
3000 : USD 1.0715

24
Ship by Wed. 19 Mar to Mon. 24 Mar
MOQ : 1
Multiples : 1
1 : USD 4.7828
10 : USD 3.184
30 : USD 2.8833
100 : USD 2.5796
500 : USD 2.4397
1000 : USD 2.3768

2910
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 1000
Multiples : 1000
1000 : USD 1.3625
2000 : USD 1.3505
3000 : USD 1.3371

7760
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 1000
Multiples : 1000
1000 : USD 1.088
2000 : USD 1.0824
3000 : USD 1.0715

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STB18N60DM2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB18N60DM2 and other electronic components in the MOSFETs category and beyond.

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STB18N60DM2 Datasheet 2 N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a D PAK package Features TAB V R max. I Order code DS DS(on) D STB18N60DM2 600 V 0.295 12 A 2 3 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance DPAK 100% avalanche tested Extremely high dv/dt ruggedness D(2, TAB) Zener-protected Applications G(1) Switching applications Description S(3) AM01475V1 This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status links STB18N60DM2 Product summary Order code STB18N60DM2 Marking 18N60DM2 Package DPAK Packing Tape and reel DS10962 - Rev 4 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB18N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 12 A D case I Drain current (continuous) at T = 100 C 7.6 A D case (1) I Drain current (pulsed) 48 A DM P Total power dissipation at T = 25 C 110 W TOT case (2) dv/dt Peak diode recovery voltage slope 40 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Storage temperature range C stg 55 to 150 T Operating junction temperature range C j 1. Pulse width is limited by safe operating area. 2. I 12, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 thj-case C/W (1) R Thermal resistance junction-pcb 30 thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 2.5 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 380 mJ AR (starting T = 25 C, I = I , V = 50 V) j D AR DD DS10962 - Rev 4 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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