X-On Electronics has gained recognition as a prominent supplier of STB18NM80 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB18NM80 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB18NM80 STMicroelectronics

STB18NM80 electronic component of STMicroelectronics
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See Product Specifications
Part No.STB18NM80
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 800 V MDMesh
Datasheet: STB18NM80 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.8098 ea
Line Total: USD 5.81 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 5.0253

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 9.4984
10 : USD 8.2367
100 : USD 6.7496
500 : USD 5.7457

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 9.4984
10 : USD 8.2367
100 : USD 6.7496
500 : USD 5.7457

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 2.808

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 2.8495

0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 9.9929
10 : USD 8.8296
30 : USD 8.1211
100 : USD 6.9398

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.8098
10 : USD 3.8007
25 : USD 3.5936
100 : USD 3.1172
500 : USD 2.6512
1000 : USD 2.3198

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 3.0791

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 3.0828

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 3.0828

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 22
Multiples : 1
22 : USD 4.2165
25 : USD 3.8739
50 : USD 3.7263
100 : USD 3.5999
250 : USD 3.4908
500 : USD 3.3958

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
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Packaging
Technology
Qg - Gate Charge
Tradename
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STB18NM80 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB18NM80 and other electronic components in the MOSFETs category and beyond.

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STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features R DS(on) Order codes V I DSS D max 3 3 2 1 STB18NM80 800 V < 0.295 17 A 1 DPAK (1) STF18NM80 800 V < 0.295 17 A TO-220FP STP18NM80 800 V < 0.295 17 A STW18NM80 800 V < 0.295 17 A 1. Limited only by maximum temperature allowed 3 3 2 2 1 100% avalanche tested 1 TO-220 Low input capacitance and gate charge TO-247 Low gate input resistance Application Figure 1. Internal schematic diagram Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics revolutionary MDmesh technology, which associates the multiple drain process with the company s PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche 3 characteristics. Utilizing STs proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to - V similar products on the market. Table 1. Device summary Order codes Marking Package Packaging STB18NM80 DPAK Tape and reel STF18NM80 TO-220FP 18NM80 STP18NM80 TO-220 Tube STW18NM80 TO-247 May 2012 Doc ID 15421 Rev 5 1/21 This is information on a product in full production. www.st.com 21Contents STB18NM80, STF18NM80, STP18NM80, STW18NM80 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 Doc ID 15421 Rev 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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