STB14NM65N, STF14NM65N STI14NM65N,STP14NM65N,STW14NM65N N-channel 650 V, 0.33 , 12 A MDmesh II Power MOSFET 2 2 TO-220, TO-220FP, D PAK, I PAK, TO-247 Features V R DSS DS(on) Type I D ( T max) max J 3 2 3 1 2 STI14NM65N 710 V < 0.38 12 A 1 IPAK TO-220 STB14NM65N 710 V < 0.38 12 A (1) STF14NM65N 710 V < 0.38 12 A 3 1 STP14NM65N 710 V < 0.38 12 A DPAK STW14NM65N 710 V < 0.38 12 A 3 2 3 1 1. Limited only by maximum temperature allowed 2 1 TO-220FP TO-247 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Application Switching applications Description This series of devices is designed using the second generation of MDmesh Technology. This revolutionary Power MOSFET associates a new vertical structure to the Companys strip layout to yield one of the worlds lowest on- resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STI14NM65N 14NM65N IPAK Tube STB14NM65N 14NM65N DPAK Tape and reel STF14NM65N 14NM65N TO-220FP Tube STP14NM65N 14NM65N TO-220 Tube STW14NM65N 14NM65N TO-247 Tube October 2008 Rev 2 1/18 www.st.com 18Contents STB/F/I/P/W14NM65N Contents 1 Electrical ratings 3 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) 7 3 Test circuit . 10 4 Package mechanical data 11 5 Packaging mechanical data 17 6 Revision history . 18 2/18