STB12NK80ZT4 STMicroelectronics

STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z N-channel 800 V, 0.65 typ., 10.5 A Zener-protected SuperMESH 2 Power MOSFET in D PAK, TO-220FP, TO-220 and TO-247 Datasheet production data Features TAB V DSS Type R I P DS(on) D W ( Tjmax) 3 1 3 STB12NK80Z 800V <0.75 10.5 A 190W 2 2 D PAK 1 STF12NK80Z 800V <0.75 10.5 A 40W TO-220FP TAB STP12NK80Z 800V <0.75 10.5 A 190W STW12NK80Z 800V <0.75 10.5 A 190W Extremely high dv/dt capability 3 2 Improved esd capability 1 TO-220 TO-247 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Figure 1. Internal schematic diagram Very good manufacturing reliability D(2,TAB) Applications Switching applications Description G(1) These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH technology, achieved through optimization of ST s well established strip-based PowerMESH layout. In S(3) addition to a significant reduction in on- AM01476v1 resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging 2 STB12NK80Z 12NK80Z D PAK Tape and reel STF12NK80Z 12NK80Z TO-220FP Tube STP12NK80Z 12NK80Z TO-220 Tube STW12NK80Z 12NK80Z TO-247 Tube August 2012 Doc ID 9567 Rev 7 1/22 This is information on a product in full production. www.st.com 22Contents STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) 7 3 Test circuits . 10 4 Package mechanical data 11 5 Packaging mechanical data 19 6 Revision history . 21 2/22 Doc ID 9567 Rev 7