STB18NM60N STMicroelectronics

STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 typ., 13 A MDmesh II Power MOSFET 2 in D PAK, TO-220FP, TO-220 and TO-247 Datasheet production data Features TAB V R DSS DS(on) Order codes I P D TOT ( Tjmax) max. 3 1 3 STB18NM60N 110 W 2 1 DPAK STF18NM60N 30 W TO-220FP 650 V < 0.285 13 A TAB STP18NM60N 110 STW18NM60N 100% avalanche tested 3 3 2 2 Low input capacitance and gate charge 1 1 Low gate input resistance TO-220 TO-247 Applications Figure 1. Internal schematic diagram Switching applications Description 4 These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order codes Marking Package Packaging STB18NM60N 18NM60N DPAK Tape and reel STF18NM60N 18NM60N TO-220FP Tube STP18NM60N 18NM60N TO-220 Tube STW18NM60N 18NM60N TO-247 Tube October 2012 Doc ID 15868 Rev 4 1/21 This is information on a product in full production. www.st.com 21Contents STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits . 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 Doc ID 15868 Rev 4