STB7ANM60N, STD7ANM60N Datasheet Automotive-grade N-channel 600 V, 0.8 typ., 5 A MDmesh II Power MOSFETs in DPAK and DPAK packages Features TAB TAB V R max. I Order code Package DS DS(on) D 3 2 STB7ANM60N DPAK 2 600 V 0.9 5 A 1 3 STD7ANM60N DPAK 1 2 D PAK DPAK AEC-Q101 qualified D(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistance G(1) Applications Switching applications S(3) AM01475v1 noZen Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STB7ANM60N STD7ANM60N Product summary Order code STB7ANM60N Marking 7ANM60N Package DPAK Packing Tape and reel Order code STD7ANM60N Marking 7ANM60N Package DPAK Packing Tape and reel DS9116 - Rev 3 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB7ANM60N, STD7ANM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 600 V DS V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 5 A D C I Drain current (continuous) at T = 100 C 3 A D C (1) I Drain current (pulsed) 20 A DM P Total power dissipation at T = 25 C 45 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 5 A, di/dt 400 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK DPAK R Thermal resistance junction-case 2.78 C/W thj-case (1) R Thermal resistance junction-pcb 35 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive (pulse I 2 A AS width limited by T ) jmax Single pulse avalanche energy (starting T = 25 C, I = j D E 119 mJ AS I , V = 50 V) AS DD DS9116 - Rev 3 page 2/20