STD10P10F6 STMicroelectronics

STD10P10F6 P-channel 100 V, 0.136 typ., 10 A STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max I DSS DS(on) D STD10P10F6 100 V 0.18 10 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications D(2, TAB) Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all G(1) DS(on) packages. Table 1: Device summary Order code Marking Package Packaging STD10P10F6 10P10F6 DPAK Tape and reel S(3) AM11258v1 For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. October 2014 DocID026365 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STD10P10F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Package mechanical data ............................................................... 8 3.1 DPAK (TO-252) type A mechanical data ........................................... 9 4 DPAK (TO-252) tape and reel mechanical data ........................... 12 5 Revision history ............................................................................ 14 2/15 DocID026365 Rev 2