STD37P3H6AG STMicroelectronics

STD37P3H6AG Automotive-grade P-channel -30 V, 11 m typ., -49 A STripFET H6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD37P3H6AG -30 V 15 m -49 A 60 W Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Figure 1: Internal schematic diagram Low gate drive power loss D(2, TAB) Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology G(1) with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. S(3) AM11258v1 Table 1: Device summary Order code Marking Package Packing STD37P3H6AG 37P3H6 DPAK Tape and Reel August 2015 DocID027952 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STD37P3H6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 DPAK (TO-252) packing information ............................................... 13 5 Revision history ............................................................................ 15 2/16 DocID027952 Rev 1