STD46P4LLF6 STMicroelectronics

STD46P4LLF6 P-channel 40 V, 0.0125 typ., StripFET F6 Power MOSFET in a DPAK package Datasheet - production data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description Figure 1: Internal schematic diagram This device is a P-channel Power MOSFET developed using the STripFET F6 technology, D(2, TAB) with a new trench gate structure. The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. Table 1: Device summary Order codes Marking Package Packaging Tape and G(1) STD46P4LLF6 46P4LLF6 DPAK reel For the P-channel Power MOSFETs the actual polarity of the voltages and the S(3) AM11258v1 current must be reversed. Features R DS(on) Order codes V I DSS D max. STD46P4LLF6 40 V 0.015 46 A December 2014 DocID025772 Rev 3 1/16 www.st.com This is information on a product in full production. Contents STD46P4LLF6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 3 Electrical characteristics (curves) .................................................. 6 4 Test circuits ..................................................................................... 8 5 Package mechanical data ............................................................... 9 5.1 DPAK (TO-252) rev. Q type A mechanical data .............................. 10 6 Packaging mechanical data .......................................................... 13 7 Revision history ............................................................................ 15 2/16 DocID025772 Rev 3