NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single NChannel, DPAK Features Low R DS(on) High Current Capability www.onsemi.com Low Gate Charge STD Prefix for Automotive and Other Applications Requiring I MAX D V R TYP (Note 1) (BR)DSS DS(ON) Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 40 V 8.7 m 10 V 70 A These Devices are PbFree and are RoHS Compliant D Applications Electronic Brake Systems Electronic Power Steering NChannel G Bridge Circuits S MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit 4 DPAK DraintoSource Voltage V 40 V DSS CASE 369C 2 STYLE 2 1 GatetoSource Voltage V 20 V GS 3 Continuous Drain T = 25C I 70 A C D Steady Current R JC State MARKING DIAGRAM T = 125C 40 C Power Dissipation Steady P 100 W D T = 25C 1 C R State AYWW JC 54 Continuous Drain Steady T = 25C I 12.2 A D A 06NG Current R State JA T = 125C 7.0 (Note 1) A A = Assembly Location* Power Dissipation Steady T = 25C P 3.0 W A D Y = Year R (Note 1) State JA WW = Work Week Pulsed Drain Current I 150 A t = 10 s p DM 5406N = Specific Device Code G = PbFree Device Operating Junction and Storage Temperature T , 55 to C J T 175 STG * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is Source Current (Body Diode) Pulsed I 63.5 A S stamped in the package, the front side assembly Single Pulse Drainto Source Avalanche EAS 450 mJ code may be blank. Energy (V = 50 V, V = 10 V, I = 30 A, DD GS PK L = 1 mH, R = 25 ) G ORDERING INFORMATION Lead Temperature for Soldering Purposes 260 C T L Device Package Shipping (1/8 from case for 10 s) NTD5406NT4G DPAK 2500 / Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be (PbFree) Reel assumed, damage may occur and reliability may be affected. STD5406NT4G* DPAK 2500 / Tape & (PbFree) Reel THERMAL RESISTANCE RATINGS (Note 1) STD5406NT4GVF01 DPAK 2500 / Tape & Parameter Symbol Max Unit (PbFree) Reel JunctiontoCase (Drain) R 1.5 C/W JC For information on tape and reel specifications, including part orientation and tape sizes, please JunctiontoAmbient (Note 1) R 49 JA refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in 2 oz including traces). Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2016 Rev. 8 NTD5406N/DNTD5406N, STD5406N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 42 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 40 V DS T = 100C 10 J GatetoSource Leakage Current I V = 0 V, V = 30 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.5 3.5 V GS(TH) GS DS D Gate Threshold Temperature V /T 7.0 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 30 A 8.7 10 m DS(on) GS D V = 5.0 V, I = 10 A 13.2 17 GS D Forward Transconductance g V = 10 V, I = 10 A 19 S FS GS D CHARGES AND CAPACITANCES Input Capacitance C 1375 2500 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 370 700 OSS V = 32 V DS Reverse Transfer Capacitance C 160 300 RSS Total Gate Charge Q 45 nC G(TOT) Threshold Gate Charge Q 2.0 G(TH) V = 10 V, V = 32 V, GS DS I = 30 A D GatetoSource Charge Q 5.4 GS GatetoDrain Charge Q 20 GD SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t 7.2 ns d(ON) Rise Time t 57 r V = 10 V, V = 32 V, GS DD I = 30 A, R = 2.5 D G TurnOff Delay Time t 30 d(OFF) Fall Time t 67 f SWITCHING CHARACTERISTICS, V = 5 V (Note 3) GS TurnOn Delay Time t 15 ns d(ON) Rise Time t 147 r V = 5.0 V, V = 20 V, GS DD I = 30 A, R = 2.5 D G TurnOff Delay Time t 20 d(OFF) Fall Time t 29 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.82 1.1 V SD J V = 0 V, GS I = 10 A S T = 125C 0.67 J Reverse Recovery Time t 46 ns RR Charge Time t 24 a V = 0 V, dI /dt = 100 A/ s, GS SD I = 10 A Discharge Time t S 22 b Reverse Recovery Charge Q 65 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2