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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - Power, P-Channel, Load Switch with Level-Shift, TSOP-6 8 V, 3.3 A NTGD1100L www.onsemi.com The NTGD1100L integrates a P and NChannel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages V R TYP I MAX (BR)DSS DS(on) D and high load currents are needed. The P Channel device is 40 m 4.5 V specifically designed as a load switch using ON Semiconductor stateoftheart trench technology. The NChannel, with an external 8.0 V 3.3 A 55 m 2.5 V resistor (R1), functions as a levelshift to drive the PChannel. The 80 m 1.8 V NChannel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply SIMPLIFIED SCHEMATIC lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V 4 2,3 applied to both V and V IN ON/OFF Q2 Features 6 Extremely Low R Load Switch MOSFET DS(on) Level Shift MOSFET is ESD Protected Low Profile, Small Footprint Package Q1 5 V Range 1.8 to 8.0 V IN ON/OFF Range 1.5 to 8.0 V 1 ESD Rating of 2000 V These Devices are PbFree and are RoHS Compliant MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS (T = 25C unless otherwise noted) J D1/G2 G1 S2 Rating Symbol Value Unit 6 5 4 Input Voltage (V , PCh) V 8.0 V DSS IN 1 ON/OFF Voltage (V , NCh) V 8.0 V GS ON/OFF TZ M TSOP6 Continuous Load Current Steady I A CASE 318G T = 25C 3.3 A L (Note 1) State STYLE 11 T = 85C 2.4 A 1 2 3 Power Dissipation Steady T = 25C P 0.83 W S1 D2 D2 A D (Note 1) State T = 85C 0.43 TZ = Specific Device Code A M = Date Code* Pulsed Load Current tp = 10 s I 10 A LM = PbFree Package Operating Junction and Storage Temperature T , 55 to C J (Note: Microdot may be in either location) T 150 STG *Date Code orientation may vary depending Source Current (Body Diode) I 1.0 A S upon manufacturing location. ESD Rating, MILSTD883D HBM ESD 2.0 kV (100 pF, 1.5 k ) Lead Temperature for Soldering Purposes T 260 C ORDERING INFORMATION L (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NTGD1100LT1G TSOP6 3000 / Tape & Reel assumed, damage may occur and reliability may be affected. (PbFree) 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: December, 2019 Rev. 12 NTGD1100L/D