NVTFS5C466NL MOSFET - Power, Single N-Channel 40 V, 7.3 m , 51 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NVTFS5C466NLWF Wettable Flanks Product V R MAX I MAX (BR)DSS DS(on) D AECQ101 Qualified and PPAP Capable 7.3 m 10 V These Devices are PbFree and are RoHS Compliant 40 V 51 A 12 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit NChannel DraintoSource Voltage V 40 V DSS D (5 8) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 51 A D C Current R JC T = 100C 36 (Notes 1, 2, 3, 4) C Steady G (4) State Power Dissipation P W T = 25C 38 C D R (Notes 1, 2, 3) JC S (1, 2, 3) T = 100C 19 C Continuous Drain T = 25C I 14 A A D Current R JA MARKING DIAGRAM T = 100C 12 (Notes 1, 3, 4) A Steady State 1 Power Dissipation T = 25C P 3.1 W D A 1 S D R (Notes 1, 3) JA T = 100C 1.5 XXXX A WDFN8 S D AYWW S D ( 8FL) Pulsed Drain Current T = 25C, t = 10 s I 214 A A p DM G D CASE 511AB Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 XXXX = Specific Device Code A = Assembly Location Source Current (Body Diode) I 31.3 A S Y = Year Single Pulse DraintoSource Avalanche E 72 mJ AS WW = Work Week Energy (I = 3 A) L(pk) = PbFree Package Lead Temperature for Soldering Purposes T 260 C L (Note: Microdot may be in either location) (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering, marking and shipping information in the package dimensions section on page 6 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit C/W JunctiontoCase Steady State (Note 3) R 4.0 JC JunctiontoAmbient Steady State (Note 3) R 48 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 4 NVTFS5C466NL/DNVTFS5C466NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown V / 29 mV/C (BR)DSS Voltage Temperature Coefficient T J Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 30 A 1.2 2.2 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 10 A 6.1 7.3 m DS(on) GS D V = 4.5 V, I = 10 A 9.7 12 GS D Forward Transconductance g V = 15 V, I = 25 A 33 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 880 pF iss GS V = 25 V DS Output Capacitance C 340 oss Reverse Transfer Capacitance C 16 rss Total Gate Charge Q 7.0 nC G(TOT) Threshold Gate Charge Q 1.8 nC G(TH) V = 4.5 V, V = 32 V, I = 25 A GS DS D GatetoSource Charge Q 3.3 GS GatetoDrain Charge Q 2.5 GD Total Gate Charge Q V = 10 V, V = 32 V, I = 25 A 16 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 10 ns d(on) Rise Time t 67 r V = 4.5 V, V = 32 V, GS DS I = 25 A, R = 2.5 D G TurnOff Delay Time t 26 d(off) Fall Time t 32 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.9 1.2 V SD GS J I = 20 A S T = 125C 0.8 J Reverse Recovery Time t 22 ns RR Charge Time t 10 a V = 0 V, dl /dt = 100 A/ s, GS S I = 25 A S Discharge Time t 12 b Reverse Recovery Charge Q 6.0 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2