X-On Electronics has gained recognition as a prominent supplier of NVTFS5C471NLWFTAG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVTFS5C471NLWFTAG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVTFS5C471NLWFTAG ON Semiconductor

NVTFS5C471NLWFTAG electronic component of ON Semiconductor
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Part No.NVTFS5C471NLWFTAG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET AFSM T6 40V LL U8FL WF
Datasheet: NVTFS5C471NLWFTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2935 ea
Line Total: USD 1.29 
Availability - 1455
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1455
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2935
10 : USD 1.0841
25 : USD 1.0797
100 : USD 0.8961
250 : USD 0.886
500 : USD 0.8339
1000 : USD 0.7817

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Numofpackaging
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVTFS5C471NLWFTAG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVTFS5C471NLWFTAG and other electronic components in the MOSFETs category and beyond.

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MOSFET Power, Single N-Channel 40 V, 9.0 m , 41 A NVTFS5C471NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX (BR)DSS DS(on) D NVTFS5C471NLWF Wettable Flanks Product 9.0 m 10 V AECQ101 Qualified and PPAP Capable 40 V 41 A These Devices are PbFree and are RoHS Compliant 15.5 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J NChannel Parameter Symbol Value Unit D (5 8) DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain I A T = 25C 41 C D Current R JC G (4) T = 100C 27 (Notes 1, 2, 3, 4) C Steady State Power Dissipation T = 25C P 30 W C D R (Notes 1, 2, 3) S (1, 2, 3) JC T = 100C 15 C Continuous Drain T = 25C I 12 A D A Current R JA MARKING DIAGRAM T = 100C 10 (Notes 1, 3, 4) A Steady 1 State Power Dissipation P W T = 25C 3.0 1 A D S D R (Notes 1, 3) JA XXXX WDFN8 S D T = 100C 2.0 A AYWW ( 8FL) S D Pulsed Drain Current T = 25C, t = 10 s I 163 A A p DM CASE 511AB G D Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 XXXX = Specific Device Code A = Assembly Location Source Current (Body Diode) I 24 A S Y = Year Single Pulse DraintoSource Avalanche E 66 mJ WW = Work Week AS Energy (I = 2.2 A) L(pk) = PbFree Package Lead Temperature for Soldering Purposes T 260 C (Note: Microdot may be in either location) L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit JunctiontoCase Steady State (Note 3) R 5.2 C/W JC JunctiontoAmbient Steady State (Note 3) R 50 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: September, 2019 Rev. 2 NVTFS5C471NL/DNVTFS5C471NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 20 A 1.2 2.2 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 10 A 7.4 9.0 m DS(on) GS D V = 4.5 V, I = 10 A 12.3 15.5 GS D Forward Transconductance g V = 15 V, I = 20 A 36 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 660 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 270 oss V = 25 V DS Reverse Transfer Capacitance C 12 rss Total Gate Charge Q 5.5 nC G(TOT) Threshold Gate Charge Q 1.4 nC G(TH) V = 4.5 V, V = 32 V, I = 20 A GS DS D GatetoSource Charge Q 2.6 GS GatetoDrain Charge Q 1.8 GD Total Gate Charge Q V = 10 V, V = 32 V, I = 20 A 12 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 9.0 ns d(on) Rise Time t 49 r V = 4.5 V, V = 32 V, GS DS I = 20 A, R = 1.0 D G TurnOff Delay Time t 20 d(off) Fall Time t 6 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.8 1.2 V SD GS J I = 10 A S T = 125C 0.7 J Reverse Recovery Time t 23 ns RR Charge Time t 11 a V = 0 V, dl /dt = 100 A/ s, GS S I = 20 A S Discharge Time t 11 b Reverse Recovery Charge Q 10 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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