Product Information

STD47N10F7AG

STD47N10F7AG electronic component of STMicroelectronics

Datasheet
MOSFET Automotive-grade N-channel 100 V, 0.0125 Ohm typ., 45 A STripFET F7 Power MOSFET in DPAK package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.9522 ea
Line Total: USD 2380.5

291000 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
291000 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2500
Multiples : 2500

Stock Image

STD47N10F7AG
STMicroelectronics

2500 : USD 0.9522

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STD47N10F7AG Automotive-grade N-channel 100 V, 12.5 m typ., 45 A, STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max. STD47N10F7AG 100 V 18 m 45 A 60 W AEC-Q101 qualified Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity Figure 1: Internal schematic diagram High avalanche ruggedness Applications D(2, TAB) Switching applications Description This N-channel Power MOSFET utilizes G(1) STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more S(3) efficient switching. AM01475v1 noZen Table 1: Device summary Order code Marking Package Packing STD47N10F7AG 47N10F7 DPAK Tape and reel February 2017 DocID027183 Rev 3 1/16 www.st.com This is information on a product in full production. Contents STD47N10F7AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 DPAK (TO-252) packing information ............................................... 13 5 Revision history ............................................................................ 15 2/16 DocID027183 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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