X-On Electronics has gained recognition as a prominent supplier of STD3NK60ZT4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD3NK60ZT4 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD3NK60ZT4 STMicroelectronics

STD3NK60ZT4 electronic component of STMicroelectronics
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Part No.STD3NK60ZT4
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N Trench 600V 2.4A (Tc) 4.5V @ 50uA 3.6 Ω @ 1.2A,10V DPAK RoHS
Datasheet: STD3NK60ZT4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7074 ea
Line Total: USD 0.71 
Availability - 1309
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7275
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.6218
5000 : USD 0.6128
7500 : USD 0.5411

1309
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7074
10 : USD 0.5966
30 : USD 0.5393
100 : USD 0.4837
500 : USD 0.4131
1000 : USD 0.396
2500 : USD 0.392

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STD3NK60ZT4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD3NK60ZT4 and other electronic components in the MOSFETs category and beyond.

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STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet N-channel 600 V, 3.2 typ., 2.4 A SuperMESH Power MOSFETs in DPAK, IPAK, DPAK, TO-220 and TO-220FP packages Features TAB TAB 3 Order codes V R max. I Package DS DS(on) D 2 3 1 1 2 D PAK IPAK 2 TAB STB3NK60ZT4 D PAK 2 3 TAB 1 STD3NK60Z-1 IPAK DPAK STD3NK60ZT4 600 V 3.6 2.4 A DPAK 3 STP3NK60Z TO-220 3 2 2 1 1 STP3NK60ZFP TO-220FP TO-220 TO-220FP Extremely high dv/dt capability D(2, TAB) 100% avalanche tested Gate charge minimized Very low intrinsic capacitance G(1) Zener-protected Applications S(3) AM01475V1 Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an Product status link optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt STB3NK60ZT4 capability for the most demanding applications. STD3NK60Z-1 STD3NK60ZT4 STP3NK60Z STP3NK60ZFP DS2912 - Rev 6 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 D PAK, TO-220 TO-220FP DPAK, IPAK V Drain-source voltage 600 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 2.4 2.4 2.4 A D C (1) I Drain current (continuous) at T = 100 C 1.51 1.51 1.51 A D C (2) (1) I Drain current (pulsed) 9.6 9.6 9.6 A DM P Total dissipation at T = 25 C 45 20 45 W TOT C Gate-source human body model ESD 2.1 kV (R = 1.5 k, C = 100 pF) Insulation withstand voltage (RMS) V 2.5 kV ISO from all three leads to external heat-sink (t = 1 s, T = 25 C) C (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 2.4 A, di/dt 200 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 D PAK TO-220 TO-220FP DPAK IPAK R Thermal resistance junction-case 2.78 6.25 2.78 C/W thj-case Thermal resistance junction- R 62.5 100 C/W thj-amb ambient (1) R Thermal resistance junction-pcb 35 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not- I repetitive 2.4 A AR (pulse width limited by T Max) j Single pulse avalanche energy E 150 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS2912 - Rev 6 page 2/34

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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