X-On Electronics has gained recognition as a prominent supplier of STD2N62K3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD2N62K3 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD2N62K3 STMicroelectronics

STD2N62K3 electronic component of STMicroelectronics
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Part No.STD2N62K3
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 620V; 1A; 45W; DPAK
Datasheet: STD2N62K3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6197 ea
Line Total: USD 0.62 
Availability - 543
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
543
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6197
10 : USD 0.61
25 : USD 0.6003
100 : USD 0.5906
250 : USD 0.5808
500 : USD 0.5712

543
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 11
Multiples : 1
11 : USD 0.5843
25 : USD 0.5785
100 : USD 0.576
250 : USD 0.5736
500 : USD 0.5712

2425
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.576

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STD2N62K3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD2N62K3 and other electronic components in the MOSFETs category and beyond.

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STD2N62K3, STF2N62K3, STU2N62K3 Datasheet N-channel 620 V, 2.9 typ., 2.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V R max. I Package DS DS(on) D STD2N62K3 DPAK STF2N62K3 620 V 3.6 2.2 A TO-220FP STU2N62K3 IPAK D(2, TAB) 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance G(1) Improved diode reverse recovery characteristics Zener-protected Applications S(3) AM01475V1 Switching applications Description These MDmesh K3 Power MOSFETs are the result of improvements applied to STMicroelectronics MDmesh technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Product status link STD2N62K3 STF2N62K3 STU2N62K3 DS7248 - Rev 3 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD2N62K3, STF2N62K3, STU2N62K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220FP IPAK V Drain-source voltage 620 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 2.2 2.2 2.2 A D C (1) I Drain current (continuous) at T = 100 C 1 1 1 A D C (2) I Drain current (pulsed) 8.8 A DM P Total dissipation at T = 25 C 45 20 45 W TOT C Insulation withstand voltage (RMS) from all three V - 2500 - V ISO leads to external heat-sink (t = 1 s, T = 25 C) C (3) Peak diode recovery voltage slope 12 V/ns dv/dt T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 2.2 A, di/dt 400 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP IPAK R Thermal resistance junction-case 2.78 6.25 2.78 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 2.2 A AR (2) E Single pulse avalanche energy 85 mJ AS 1. Pulse width limited by T max. j 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS7248 - Rev 3 page 2/27

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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