X-On Electronics has gained recognition as a prominent supplier of STD2NK90ZT4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD2NK90ZT4 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD2NK90ZT4 STMicroelectronics

STD2NK90ZT4 electronic component of STMicroelectronics
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Part No.STD2NK90ZT4
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; DPAK
Datasheet: STD2NK90ZT4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7871 ea
Line Total: USD 0.79 
Availability - 2471
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2471
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7871
10 : USD 0.6538
30 : USD 0.5853
100 : USD 0.5188
500 : USD 0.4151
1000 : USD 0.3956

95
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.212
10 : USD 1.323
26 : USD 0.6664
71 : USD 0.63

9700
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.7212
5000 : USD 0.7035
10000 : USD 0.6818

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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We are delighted to provide the STD2NK90ZT4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD2NK90ZT4 and other electronic components in the MOSFETs category and beyond.

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STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z Datasheet N-channel 900 V, 5 typ., 2.1 A SuperMESH Power MOSFETs in IPAK, DPAK and TO-220 packages Features TAB TAB 3 2 Order code V R max. I Package 1 DS DS(on) D 3 2 IPAK 1 DPAK STD2NK90Z-1 IPAK TAB STD2NK90ZT4 900 V 6.5 2.1 A DPAK STP2NK90Z TO-220 Extremely high dv/dt capability 3 TO-220 2 1 100% avalanche tested Gate charge minimized D(2, TAB) Very low intrinsic capacitance Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD2NK90Z-1 STD2NK90ZT4 STP2NK90Z DS4030 - Rev 5 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 900 V DS V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 2.1 A D C I Drain current (continuous) at T = 100 C 1.3 A D C (1) I Drain current (pulsed) 8.4 A DM P Total dissipation at T = 25 C 70 W TOT C ESD Gate-source human body model (C = 100 pF, R =1.5 k) 2 kV (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 2.1 A, di/dt 200 A/s, V = 80% V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK IPAK TO-220 R Thermal resistance junction-case 1.78 thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb R Thermal resistance junction-ambient 100 62.5 thj-amb 1. When mounted on FR-4 board of 1 inch, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Single-pulse avalanche current 2.1 A AS (2) E Single pulse avalanche energy 150 mJ AS 1. Pulse width limited by T . jmax 2. Starting T = 25C, I = I , V = 50 V. j D AR DD DS4030 - Rev 5 page 2/24

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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