STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z Datasheet N-channel 900 V, 5 typ., 2.1 A SuperMESH Power MOSFETs in IPAK, DPAK and TO-220 packages Features TAB TAB 3 2 Order code V R max. I Package 1 DS DS(on) D 3 2 IPAK 1 DPAK STD2NK90Z-1 IPAK TAB STD2NK90ZT4 900 V 6.5 2.1 A DPAK STP2NK90Z TO-220 Extremely high dv/dt capability 3 TO-220 2 1 100% avalanche tested Gate charge minimized D(2, TAB) Very low intrinsic capacitance Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD2NK90Z-1 STD2NK90ZT4 STP2NK90Z DS4030 - Rev 5 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 900 V DS V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 2.1 A D C I Drain current (continuous) at T = 100 C 1.3 A D C (1) I Drain current (pulsed) 8.4 A DM P Total dissipation at T = 25 C 70 W TOT C ESD Gate-source human body model (C = 100 pF, R =1.5 k) 2 kV (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 2.1 A, di/dt 200 A/s, V = 80% V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK IPAK TO-220 R Thermal resistance junction-case 1.78 thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb R Thermal resistance junction-ambient 100 62.5 thj-amb 1. When mounted on FR-4 board of 1 inch, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Single-pulse avalanche current 2.1 A AS (2) E Single pulse avalanche energy 150 mJ AS 1. Pulse width limited by T . jmax 2. Starting T = 25C, I = I , V = 50 V. j D AR DD DS4030 - Rev 5 page 2/24