STD30PF03LT4 STMicroelectronics

STD30PF03LT4 STD30PF03L-1 P-channel 30 V - 0.025 - 24 A - DPAK / IPAK STripFET II Power MOSFET Features Type V R max I DSS DS(on) D STD30PF03LT4 30 V < 0.028 24 A STD30PF03L-1 30 V < 0.028 24 A 3 3 2 1 1 Standard outline for easy automated surface DPAK IPAK mount assembly Low threshold device Low gate charge Application Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on- resistance and low gate charge. Table 1. Device summary Order codes Marking Package Packaging STD30PF03LT4 D30PF03L DPAK Tape & reel STD30PF03L-1 D30PF03L IPAK Tube January 2008 Rev 2 1/13 www.st.com 13Electrical ratings STD30PF03LT4 - STD30PF03L-1 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V =0) 30 V DS GS V Gate-source voltage 16 V GS (1) Drain current (continuous) at T = 25 C 24 A I C D (1) Drain current (continuous) at T = 100 C 24 A I C D (2) Drain current (pulsed) 96 A I DM P Total dissipation at T =25 C 70 W TOT C Derating factor 0.47 W/C (3) E Single pulse avalanche energy 850 mJ AS T Storage temperature -55 to 175 C stg T Max. operating junction temperature 175 C j 1. Current limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting T = 25 C, I = 12 A, V =15 V J D DD Table 3. Thermal data Max value Symbol Parameter Unit DPAK IPAK R Thermal resistance junction-case max 2.14 C/W thj-case R Thermal resistance junction-ambient max -- 100 C/W thj-amb (1) R Thermal resistance junction-pcb max -- C/W thj-pcb 50 T Maximum lead temperature for soldering purpose -- 275 C/W l 1. When mounted on FR- 4board of 1 inch. Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed 2/13