STD35P6LLF6 STMicroelectronics

STD35P6LLF6 P-channel 60 V, 0.025 typ., 35 A STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DSS DS(on) D TOT STD35P6LLF6 60 V 0.028 35 A 70 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications Switching applications D(2, TAB) Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) G(1) packages. S(3) AM11258v1 Table 1: Device summary Order code Marking Package Packaging STD35P6LLF6 35P6LLF6 DPAK Tape and Reel April 2017 DocID025600 Rev 3 1/16 www.st.com This is information on a product in full production. Contents STD35P6LLF6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK package information ............................................................. 10 4.2 Packing information ......................................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID025600 Rev 3