STD3NK50Z-1 STMicroelectronics

STD3NK50Z-1, STD3NK50ZT4 Datasheet N-channel 500 V, 2.8 typ., 2.3 A SuperMESH Power MOSFETs in IPAK and DPAK packages Features Order codes V R max. P Package DSS DS(on) TOT TAB TAB STD3NK50Z-1 IPAK 2 3 500 V 3.3 45 W 1 3 STD3NK50ZT4 DPAK 2 IPAK 1 DPAK Extremely high dv/dt capability 100% avalanche tested Gate charge minimized D(2, TAB) Very low intrinsic capacitance Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD3NK50Z-1 STD3NK50ZT4 DS3956 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD3NK50Z-1, STD3NK50ZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 500 V DS V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 2.3 A D C I Drain current (continuous) at T = 100 C 1.45 A D C (1) I Drain current (pulsed) 9.2 A DM P Total dissipation at T = 25 C 45 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns ESD Gate-source human body model (C = 100 pF, R = 1.5 k) 2 kV T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 2 A, di/dt 200 A/s, V V . SD DD (BR)DSS Table 2. Thermal data Value Unit Symbol Parameter IPAK DPAK R Thermal resistance junction- case 2.78 C/W thj-case R Thermal resistance junction-ambient 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 2.3 A AR (pulse width limited by T max) j Single pulse avalanche energy E 120 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS3956 - Rev 3 page 2/21