X-On Electronics has gained recognition as a prominent supplier of STD52P3LLH6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD52P3LLH6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD52P3LLH6 STMicroelectronics

STD52P3LLH6 electronic component of STMicroelectronics
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Part No.STD52P3LLH6
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET
Datasheet: STD52P3LLH6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.1334 ea
Line Total: USD 3.13 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 1.3103
5000 : USD 1.3052
10000 : USD 1.3
15000 : USD 1.2948
20000 : USD 1.2895
25000 : USD 1.2841
30000 : USD 1.2787
50000 : USD 1.2731
100000 : USD 1.2675

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.1334
10 : USD 1.1087
100 : USD 0.7988
500 : USD 0.6764
1000 : USD 0.5431

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.6287

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.6287

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the STD52P3LLH6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD52P3LLH6 and other electronic components in the MOSFETs category and beyond.

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STD52P3LLH6 Datasheet P-channel 30 V, 10 m typ., 52 A, STripFET H6 Power MOSFET in a DPAK package Features V R max I P Order codes TAB DSS DS(on) D TOT STD52P3LLH6 30 V 12 m 52 A 70 W 3 2 1 Very low on-resistance DPAK Very low gate charge High avalanche ruggedness D(2, TAB) Low gate drive power loss Applications Switching applications G(1) Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits S(3) AM11258v1 very low R in all packages. DS(on) Product status link STD52P3LLH6 Product summary Order code STD52P3LLH6 Marking 52P3LLH6 Package DPAK Packing Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS10148 - Rev 3 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STD52P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 30 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 52 A C I D Drain current (continuous) at T = 100 C 37.5 A C (1) I Drain current (pulsed) 208 A DM P Total power dissipation at T = 25 C 70 W TOT C T Storage temperature -55 to 175 C stg T Max. operating junction temperature 175 C J 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 2.14 C/W Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS10148 - Rev 3 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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