STD5N20LT4 STMicroelectronics

STD5N20L N-CHANNEL 200V - 0.65 - 5A DPAK STripFET MOSFET Table 1: General Features Figure 1: Package TYPE V R I Pw DSS DS(on) D STD5N20L 200 V < 0.7 5 A 33 W TYPICAL R (on) = 0.65 5V DS CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE LOW THRESHOLD DEVICE 3 1 DESCRIPTION The STD5N20L utilizes the latest advanced de- sign rules of STs proprietary STripFET technol- DPAK ogy. This is suitable for the most demanding DC Motor Control and lighting application. Figure 2: Internal Schematic Diagram APPLICATIONS UPS AND MOTOR CONTROL LIGHTING Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STD5N20LT4 D5N20L DPAK TAPE & REEL Rev. 3 September 2004 1/10 NEW DATASHEET ACCORDING TO PCN DSG-TRA/04/532STD5N20L Table 3: Absolute Maximum ratings Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 200 V DS GS V Drain-gate Voltage (R = 20 k ) 200 V DGR GS V Gate- source Voltage 20 V GS I Drain Current (continuous) at T = 25C 5A D C I Drain Current (continuous) at T = 100C 3.6 A D C I ( ) Drain Current (pulsed) 20 A DM P Total Dissipation at T = 25C 33 W TOT C Derating Factor 0.27 W/C T Storage Temperature stg 55 to 150 C T Operating Junction Temperature j ( ) Pulse width limited by safe operating area Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 3.75 C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 C/W T Maximum Lead Temperature For Soldering Purpose 275 C l ELECTRICAL CHARACTERISTICS (T =25C UNLESS OTHERWISE SPECIFIED) CASE Table 5: On/Off Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source I = 250 A, V = 0 200 V (BR)DSS D GS Breakdown Voltage I Zero Gate Voltage V = Max Rating 1A DSS DS Drain Current (V = 0) GS V = Max Rating, T = 125C DS C 10 A I Gate-body Leakage V = 20V 100 nA GSS GS Current (V = 0) DS V V = V , I = 50A Gate Threshold Voltage 12.5V GS(th) DS GS D R Static Drain-source On V = 5 V, I = 2.5 A 0.65 0.7 DS(on) GS D Resistance 2/10