STD5N65M6 STMicroelectronics

STD5N65M6 N-channel 650 V, 1.15 typ., 4 A MDmesh M6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD5N65M6 650 V 1.3 4 A Reduced switching losses Lower R x area vs previous generation DS(on) Low gate input resistance 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end- application efficiency. Table 1: Device summary Order code Marking Package Packing STD5N65M6 5N65M6 DPAK Tape and reel May 2016 DocID029222 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STD5N65M6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) package information ................................................ 9 4.2 DPAK (TO-252) packing information ............................................... 12 5 Revision history ............................................................................ 14 2/15 DocID029222 Rev 1