AUIRFS4115-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology V 150V DSS Ultra Low On-Resistance R typ. 10m DS(on) Dynamic dV/dT Rating max. 11.8m 175C Operating Temperature I 105A Fast Switching D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of 2 this design are a 175C junction operating temperature, fast D Pak 7 Pin switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and G D S reliable device for use in Automotive applications and a wide variety of other applications. Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity Tube 50 AUIRFS4115-7P 2 AUIRFS4115-7P D Pak 7 Pin Tape and Reel Left 800 AUIRFS4115-7TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 105 D C GS I T = 100C Continuous Drain Current, V 10V 74 A D C GS I Pulsed Drain Current 420 DM P T = 25C Maximum Power Dissipation 380 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 230 AS mJ I Avalanche Current See Fig.14,15, 22a, 22b A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery 32 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.40 R JC C/W Junction-to-Ambient 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-12-4 AUIRFS4115-7P Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.18 V/C Reference to 25C, I = 3.5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 10 11.8 m V = 10V, I = 63A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 93 S V = 50V, I = 63A DS D R Gate Resistance 2.1 G 20 V = 150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 150V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Total Gate Charge 73 110 Q I = 63A g D Q Gate-to-Source Charge 28 V = 75V gs DS nC Q Gate-to-Drain Charge 28 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 45 sync g gd t Turn-On Delay Time 18 V = 98V d(on) DD t Rise Time 50 I = 63A r D ns t Turn-Off Delay Time 37 R = 2.1 d(off) G t Fall Time 23 V = 10V f GS C Input Capacitance 5320 V = 0V iss GS C Output Capacitance 490 V = 50V oss DS C Reverse Transfer Capacitance 110 = 1.0MHz rss pF C Effective Output Capacitance (Energy Related) 450 V = 0V, V = 0V to 120V oss eff.(ER) GS DS C Effective Output Capacitance (Time Related) 520 V = 0V, V = 0V to 120V oss eff.(TR) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 104 S (Body Diode) showing the A Pulsed Source Current integral reverse I 420 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 63A,V = 0V SD J S GS 82 T = 25C V = 130V J DD t Reverse Recovery Time ns rr 99 T = 125C I = 63A, J F 271 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 385 T = 125C J I Reverse Recovery Current 6.0 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 0.115mH, R = 25 , I = 63A, V =10V. Part not recommended for use above Jmax, J G AS GS this value. I 63A, di/dt 2510A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2015-12-4