Doc No. TT4-EA-13637
Revision. 3
Product Standards
MOS FET
FK8V03020L
FK8V03020L
Silicon N-channel MOS FET
Unit: mm
2. 9
For lithium-ion secondary battery protecion circuit
0.3 0. 16
8 7 6 5
Features
Low drain-source On-state Resistance
RDS(on) typ = 5.4 m (VGS = 4.5 V)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1 234
(0.81)
0. 65
Marking Symbol: 3B
1. Source 5. Drain
2. Source 6. Drain
Packaging 3. Source 7. Drain
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 4. Gate 8. Drain
Panasonic WMini8-F1
JEITA SC-115
Code
Absolute Maximum Ratings Ta = 25 C
Parameter Symbol Rating Unit Internal Connection
Drain-source Voltage VDS 33 V
(D) (D) (D) (D)
Gate-source Voltage VGS 20 V
8 7 6 5
*1
14
Drain Current (Steady State)
ID
*1
18
Drain Current (t = 10 s)
*1,*2
IDp 56 A
Drain Current (Pulsed)
Source Current (Pulsed)
ISp
14
*1,*2
(BD)
(Body Diode)
*1
1
Total Power Dissipation (Steady State) 1 2 3 4
PD W
(S) (S) (S) (G)
*1
1.6
Total Power Dissipation (t = 10 s)
Tch 150
Channel Temperature C
Pin Name
Operating Ambient Temperature Topr -40 to + 85 C
Tstg -55 to +150 1. Source 5. Drain
Storage Temperature Range C
*3
Iar 60 A 2. Source 6. Drain
Avalanche Current
Note: *1 Device mounted on a glass-epoxy board (See Figure 1) 3. Source 7. Drain
4. Gate 8. Drain
*2 Pulse test: Ensure that the channel temperature does not exceed 150 C
*3 Conditions: VDS = 24 V, VGS = 10 V, L = 10 H
Figure1 FR4 Glass-Epoxy Board
25.4 mm 25.4 mm 0.8 mm
Page 1 of 6
Established : 2011-06-03
Revised : 2013-10-15
2.4
2.8Doc No. TT4-EA-13637
Revision. 3
Product Standards
MOS FET
FK8V03020L
Electrical Characteristics Ta = 25 C 3C
Static Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0 V 33 V
Zero Gate Voltage Drain Current IDSS VDS = 33 V, VGS = 0 V 1 A
Gate-source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A
Gate-source Threshold Voltage Vth ID = 2.2 mA, VDS = 10 V 1.0 3.0 V
RDS(on)1 ID = 7A, VGS = 10 V 3.6 4.6
*1
m
Drain-source On-state Resistance
RDS(on)2 ID = 7A, VGS = 4.5 V 5.4 9.8
Dynamic Characteristics
Input Capacitance Ciss 1500
VDS = 10 V, VGS = 0 V
Output Capacitance Coss 300 pF
f = 1 MHz
Reverse Transfer Capacitance Crss 200
*2
td(on) VDD = 15 V, VGS = 0 to 10 V 10
Turn-on Delay Time
*2
Rise Time tr ID = 7 A 5
ns
*2
td(off) 200
Turn-off Delay Time VDD = 15 V, VGS = 10 to 0 V
*2
tf ID = 7 A 150
Fall Time
Total Gate Charge Qg 14
VDD = 15 V, VGS = 0 to 4.5 V,
Gate-source Charge Qgs 4 nC
ID = 14 A
Gate-drain Charge Qgd 6
Body Diode Characteristic
*1
VSD IS = 7 A, VGS = 0 V 0.8 1.2 V
Diode Forward Voltage
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1
Pulse test: Ensure that the channel temperature does not exceed 150 C
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
Page 2 of 6
Established : 2011-06-03
Revised : 2013-10-15