Green
DMNH6012SPSQ
60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary Features and Benefits
I Max
D Rated to +175C Ideal for High Ambient Temperature
BV R Max
DSS DS(ON)
T = +25C
C
Environments
60V 11m @ V = 10V 50A
GS
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low R Minimizes Power Losses
DS(ON)
Low Q Minimizes Switching Losses
G
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications Mechanical Data
This MOSFET is designed to meet the stringent requirements of Case: PowerDI 5060-8
Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound.
PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
DC Motor Control
Solderable per MIL-STD-202, Method 208
Solenoid Driving
Terminal Connections: See Diagram Below
Power Management Functions
Weight: 0.097 grams (Approximate)
PowerDI5060-8
D
S
D
Pin1
S
D
S D
G
D
G
S
Top View
Top View
Internal Schematic
Bottom View
Pin Configuration
Ordering Information (Note 5)
Part Number Case Packaging
DMNH6012SPSQ-13 PowerDI5060-8 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMNH6012SPSQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 60 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
T = +25C 50
C
I A
Continuous Drain Current (Note 7) V = 10V D
GS
30
T = +100C
C
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) I 120 A
DM
Maximum Continuous Body Diode Forward Current (Note 7) I 2.6 A
S
Avalanche Current, L = 0.1mH (Note 8) 45
I A
AS
Avalanche Energy, L = 0.1mH (Note 8) 100
E mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) P 1.6 W
D
Steady State 93
Thermal Resistance, Junction to Ambient (Note 6) C/W
R
JA
t<10s 51
Total Power Dissipation (Note 7) P 3.1 W
D
Steady State 49
Thermal Resistance, Junction to Ambient (Note 7)
R
JA
t<10s 26
C/W
Thermal Resistance, Junction to Case R 3.8
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current, T = +25C I 1 A V = 60V, V = 0V
J DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage 2 4 V
V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance 8 11 m
R V = 10V, I = 50A
DS(ON) GS D
Diode Forward Voltage 0.7 1.2 V
V V = 0V, I = 1.7A
SD GS S
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance 1,926 pF
C
ISS
V = 30V, V = 0V,
DS GS
Output Capacitance 330 pF
C
OSS
f = 1MHz
Reverse Transfer Capacitance 112 pF
C
RSS
2.0
Gate Resistance R V = 0V, V = 0V, f = 1MHz
G DS GS
16.3
Total Gate Charge (V = 4.5V) Q nC
GS G
35.2
Total Gate Charge (V = 10V) Q nC
GS G
V = 30V, I = 25A
DS D
Gate-Source Charge Q 7.6 nC
GS
Gate-Drain Charge 6.9 nC
Q
GD
Turn-On Delay Time 6.4 ns
t
D(ON)
Turn-On Rise Time 11.9 ns
t V = 10V, V = 30V,
R GS DS
Turn-Off Delay Time 16.5 ns R = 3, I = 25A
t G D
D(OFF)
Turn-Off Fall Time 5 ns
t
F
Body Diode Reverse Recovery Time 28 ns
t
RR
I = 25A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge 23 nC
Q
RR
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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DMNH6012SPSQ April 2016
Diodes Incorporated
www.diodes.com
Document number: DS38778 Rev. 1 - 2
NEW PRODUCT