DMN3016LDV
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features
I max Low On-Resistance
D
BV R max
DSS DS(ON)
T = +25C Low Input Capacitance
C
Fast Switching Speed
12m @ V = 10V 21A
GS
30V
Low Input/Output Leakage
17m @ V = 4.5V 18A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
This new generation MOSFET is designed to minimize the on-state
Mechanical Data
resistance (R ) and yet maintain superior switching performance,
DS(ON)
Case: PowerDI3333-8 (Type UXC)
making it ideal for high efficiency power management applications.
Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Power Management Functions
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Analog Switch
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
PowerDI3333-8 (Type UXC)
D 1
D 2
D1
D1
D2
D2
S1
G1 G2
G1
S2
G2
PIN1
S1
S2
Top View Equivalent Circuit
Bottom View
Ordering Information (Note 4)
Part Number Case Packaging
DMN3016LDV-7 PowerDI3333-8 (Type UXC) 2000/Tape & Reel
DMN3016LDV-13 PowerDI3333-8 (Type UXC) 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN3016LDV
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 30 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 21
C
Continuous Drain Current, V = 10V (Note 7) I A
GS D
State 17
T = +70C
C
Maximum Body Diode Forward Current (Note 6) I A
S
Pulsed Drain Current (380s pulse, Duty cycle = 1%) 70 A
I
DM
Avalanche Current (L = 0.1mH) (Note 8) 22 A
I
AS
Avalanche Energy (L = 0.1mH) (Note 8) 24 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 0.9 W
P
D
Steady State 134
Thermal Resistance, Junction to Ambient (Note 5) R C/W
JA
t<10s 78
Total Power Dissipation (Note 6) 1.8 W
P
D
Steady State 70
Thermal Resistance, Junction to Ambient (Note 6) R
JA
t<10s 41 C/W
Thermal Resistance, Junction to Case (Note 7) 15
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage 30 - - V
BV V = 0V, I = 250A
DSS GS D
- - 1 A
Zero Gate Voltage Drain Current T = +25C I V = 30V, V = 0V
J DSS DS GS
Gate-Source Leakage - - 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage 1.4 - 2.0 V
V V = V , I = 250A
GS(TH) DS GS D
9.5 12
V = 10V, I = 7A
GS D
Static Drain-Source On-Resistance R - m
DS(ON)
14 17 V = 4.5V, I = 7A
GS D
Diode Forward Voltage V - 0.70 1.0 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance C - 1184 -
iss
V = 15V, V = 0V,
DS GS
Output Capacitance C - 137 - pF
oss
f = 1.0MHz
Reverse Transfer Capacitance - 107 -
Crss
Gate Resistance - 3.0 -
R V = 0V, V = 0V, f = 1.0MHz
g DS GS
- 9.5 -
Total Gate Charge (V = 4.5V) Q
GS g
- 21 -
Total Gate Charge (V = 10V) Q
GS g
nC V = 15V, I = 12A
DS D
Gate-Source Charge - 3.8 -
Q
gs
Gate-Drain Charge - 4.1 -
Q
gd
Turn-On Delay Time t - 4.5 -
D(ON)
Turn-On Rise Time t - 3.3 -
R VDD = 15V, VGS = 10V,
ns
Turn-Off Delay Time t - 14 - R = 1.5, R = 3
D(OFF) L G
Turn-Off Fall Time t - 3.6 -
F
Reverse Recovery Time t - 9.3 - ns
RR
I = 12A, di/dt = 500A/s
F
Reverse Recovery Charge - 2.5 - nC
Q
RR
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I and E rating are based on low frequency and duty cycles to keep T = +25C.
AS AS J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
PowerDI is a registered trademark of Diodes Incorporated.
2 of 7
DMN3016LDV July 2016
Diodes Incorporated
www.diodes.com
Document number: DS38744 Rev. 2 - 2
ADVANCED INFORMATION