STL19N60M2 Datasheet N-channel 600 V, 0.278 typ., 11 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Features V R max. I Order code DS DS(on) D 5 STL19N60M2 600 V 0.308 11 A 4 3 2 Extremely low gate charge 1 Excellent output capacitance (C ) profile OSS 100% avalanche tested PowerFLAT 8x8 HV Zener-protected Drain(5) Applications Switching applications Gate(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 Driver technology. Thanks to its strip layout and an improved vertical structure, the device Power source (2) source (3, 4) exhibits low on-resistance and optimized switching characteristics, rendering it NG1DS2PS34D5Z suitable for the most demanding high efficiency converters. Product status link STL19N60M2 Product summary Order code STL19N60M2 Marking 19N60M2 Package PowerFLAT 8x8 HV Packing Tape and reel DS11488 - Rev 3 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL19N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 11 A D C I Drain current (continuous) at T = 100 C 6.9 A D C (1) I Drain current (pulsed) 44 A DM P Total power dissipation at T = 25 C 90 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width limited by safe operating area. 2. I 11 A, di/dt 400 A/s V < V , V = 400 V. SD DS(peak) (BR)DSS DD 3. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.39 C/W thj-case (1) R Thermal resistance junction-pcb 45 C/W thj-pcb 1. When mounted on FR-4 board of inch, 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T max) 3 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I V = 50 V) 135 mJ AS J D AR DD DS11488 - Rev 3 page 2/14