STL19N65M5 STMicroelectronics

STL19N65M5 N-channel 650 V, 0.215 typ., 12.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V R I DS DS(on)max. D 6 6 (1) STL19N65M5 710 V 0.240 12.5 A 6 * 1. The value is rated according to R and limited by thj-case package. Worldwide best R * area DS(on) Higher V rating and high dv/dt capability DSS Excellent switching performance 7 +9 3RZHU)/ Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The * resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior 6 power density and outstanding efficiency. 0 Y Table 1. Device summary Order code Marking Package Packaging STL19N65M5 19N65M5 PowerFLAT 8x8 HV Tape and reel July 2013 DocID024984 Rev 1 1/17 This is information on a product in full production. www.st.comContents STL19N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 14 6 Revision history . 16 2/17 DocID024984 Rev 1