STL18N60M2 STMicroelectronics

STL18N60M2 N-channel 600 V, 0.278 typ., 9 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V T R max. I DS Jmax DS(on) D STL18N60M2 650 V 0.308 9 A Extremely low gate charge 1 Excellent output capacitance (C ) profile OSS 2 100% avalanche tested 3 4 Zener-protected Applications PowerFLAT 5x6 HV Switching applications Description Figure 1: Internal schematic diagram This device is an N-channel Power MOSFET developed using MDmesh M2 technology. D(5, 6, 7, 8) 8 7 6 5 Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. G(4) 1 2 3 4 Top View S(1, 2, 3) Table 1: Device summary Order code Marking Package Packing STL18N60M2 18N60M2 PowerFLAT 5x6 HV Tape and reel August 2017 DocID026517 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STL18N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 5x6 HV package information .................................... 10 4.2 PowerFLAT 5x6 packing information ........................................... 12 5 Revision history ............................................................................ 14 2/15 DocID026517 Rev 2