STL150N3LLH6 STMicroelectronics

STL150N3LLH6 Datasheet N-channel 30 V, 0.0016 typ., 33 A, STripFET H6 Power MOSFET in a PowerFLAT 5x6 package Features V R max. I Order code Package DS DS(on) D STL150N3LLH6 30 V 0.002 33 A PowerFLAT 5x6 Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications D(5, 6, 7, 8) 8 7 6 5 Switching applications Description G(4) This device is an N-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits 1 2 3 4 very low R in all packages. DS(on) Top View S(1, 2, 3) NG4D5678S123 Product status link STL150N3LLH6 Product summary Order code STL150N3LLH6 Marking 150N3LH6 Package PowerFLAT 5x6 Packing Tape and reel DS6078 - Rev 4 - April 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL150N3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 30 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 150 C (1) I A D Drain current (continuous) at T = 100 C 93 C Drain current (continuous) at T = 25 C 33 A pcb (2) I D Drain current (continuous) at T = 100 C 20.8 A pcb (1) P Total power dissipation at T = 25 C 80 W TOT C (2) P Total power dissipation at T = 25 C 4 W TOT pcb E Single pulse avalanche energy (starting T = 25 C, I = I ) 200 mJ AS J D AV I Not-repetitive avalanche current, (pulse width limited by T ) 20 A AV jmax Storage temperature range T stg -55 to 150 C T j Operating junction temperature range 1. The value is rated according to R . thj-c 2. The value is rated according to R . thj-pcb Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.56 thj-case C/W (1) R Thermal resistance junction-pcb 31.3 thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board, t < 10 s. DS6078 - Rev 4 page 2/16