STL160N4F7 Datasheet N-channel 40 V, 2.1 m typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features V R max I Order code DS DS(on) D STL160N4F7 40 V 2.5 m 120 A Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications D(5, 6, 7, 8) 8 7 6 5 Switching applications G(4) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing 1 2 3 4 internal capacitance and gate charge for faster and more efficient switching. Top View S(1, 2, 3) AM15540v2 Product status STL160N4F7 Product summary Order code STL160N4F7 Marking 160N4F7 Package PowerFLAT 5x6 Packing Tape and reel DS11024 - Rev 3 - November 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL160N4F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 40 V DS V Gate-source voltage 20 V GS (1) (2) I Drain current (continuous) at T = 25 C 120 A C D (2) I Drain current (continuous) at T = 100 C 108 A C D (3) (2) I Drain current (pulsed) 480 A DM (2) Total power dissipation at T = 25 C P 111 W TOT C (4) Drain current (continuous) at T = 25 C I 32 A D pcb (4) Drain current (continuous) at T = 100 C I 22 A D pcb (3) (4) I Drain current (pulsed) 128 A DM (4) P Total power dissipation at T = 25 C 4.8 W TOT pcb I Avalanche current 16 A AV E Single pulse avalanche energy (T = 25 C, I = 16A, V = 25V) 260 mJ AS j D DD T Storage temperature range stg -55 to 175 C T j Operating junction temperature range 1. Drain current is limited by package 2. This value is rated according to Rthj-c 3. Pulse width limited by safe operating area 4. This value is rated according to R thj-pcb Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-pcb 31.3 C/W thj-pcb R Thermal resistance junction-case 1.35 C/W thj-case 1. When mounted on FR-4 board of 1 inch, 2oz Cu, t < 10 sec DS11024 - Rev 3 page 2/18