STL17N65M5 STMicroelectronics

STL17N65M5 N-channel 650 V, 0.338 typ., 10 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - preliminary data Features Order code V T R max I DS Jmax DS(on) D %RWWRPYLHZ 6 6 (1) 6 STL17N65M5 710 V 0.374 10 A * 1. The value is rated according to R and limited by thj-case package Worldwide best R * area DS(on) 7 +9 3RZHU)/ Higher V rating and high dv/dt capability DSS Excellent switching performance Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The * resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially 6 suitable for applications which require superior power density and outstanding efficiency. 0 Y Table 1. Device summary Order code Marking Package Packaging STL17N65M5 17N65M5 PowerFLAT 8x8 HV Tape and reel July 2013 DocID023031 Rev 3 1/16 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com change without notice. contents STL17N65M5 contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID023031 Rev 3