STL120N4LF6AG Datasheet Automotive-grade N-channel 40 V, 3.0 m typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Features V R max. I P Order code DS DS(on) D TOT STL120N4LF6AG 40 V 3.6 m 55 A 96 W 4 3 2 AEC-Q101 qualified 1 Very low on-resistance PowerFLAT 5x6 Very low gate charge High avalanche ruggedness D(5, 6, 7, 8) 8 7 6 5 Low gate drive power loss Wettable flank package G(4) Applications Switching applications 1 2 3 4 Top View Description S(1, 2, 3) NG4D5678S123 This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all packages. DS(on) Product status link STL120N4LF6AG Product summary Order code STL120N4LF6AG Marking 120N4LF6 Package PowerFLAT 5x6 Packing Tape and reel DS11230 - Rev 3 - June 2021 www.st.com For further information contact your local STMicroelectronics sales office.STL120N4LF6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 40 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 55 C I A D Drain current (continuous) at T = 100 C 55 C (2) I Drain current (pulsed) 220 A DM P Total power dissipation at T = 25 C 96 W TOT C T Storage temperature range C stg - 55 to 175 T Operating junction temperature range C J 1. Drain current is limited by package, the current capability of the silicon is 120 A at 25 C. 2. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 1.56 C/W thJC (1) R Thermal resistance, junction-to-board 31.3 C/W thJB 1. When mounted on 1 inch 2 Oz. Cu board, t 10 s. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 26 A AV (pulse width limited by maximum junction temperature) E Single pulse avalanche energy (T = 25 C, I = I , V = 25 V) 200 mJ AS J C AV DD DS11230 - Rev 3 page 2/15