DMNH6008SCT
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Rated to +175CIdeal for High Ambient Temperature
D MAX
BV R
DSS DS(ON) MAX
T = +25C
C
Environments
60V 130A
8.0m @ V = 10V
GS
100% Unclamped Inductive SwitchingEnsures More Reliable
and Robust End Application
Low Input Capacitance
Description Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
This new generation MOSFET is designed to minimize the on-state
Halogen and Antimony Free. Green Device (Note 3)
resistance (R ), yet maintain superior switching performance,
DS(ON)
Qualified to AEC-Q101 Standards for High Reliability
making it ideal for high-efficiency power management applications.
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMNH6008SCTQ)
Applications Mechanical Data
Motor Control Case: TO220AB
Backlighting Case Material: Molded Plastic, Green Molding Compound.
DC-DC Converters UL Flammability Classification Rating 94V-0
Power Management Functions Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
D
TO220AB
G
S
Top View
Pin Out Configuration
Top View Bottom View Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMNH6008SCT TO220AB 50 Pieces/Tube
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
DMNH6008SCT
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 60 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 130
C
Continuous Drain Current (Note 5) V = 10V I A
GS D
State 90
T = +100C
C
200
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A
DM
80
Maximum Continuous Body Diode Forward Current (Note 5) I A
S
Avalanche Current (Note 6) L=0.1mH 62 A
I
AS
Avalanche Energy (Note 6) L=0.1mH 190 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
210
Power Dissipation (Note 5) T = +25C
C
P W
D
100
TC = +100C
0.7
Thermal Resistance, Junction to Case (Note 5) C/W
R
JC
Operating and Storage Temperature Range -55 to +175 C
T , T
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 16V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 2 4 V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 6.0 8.0 m V = 10V, I = 20A
DS(ON) GS D
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 2,596
C
iss
V = 30V, V = 0V
DS GS
Output Capacitance 437 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 118
C
rss
Gate Resistance 2.0
R V = 0V, V = 0V, f = 1.0MHz
g DS GS
40
Total Gate Charge (V = 10V) Q
GS g
21
Total Gate Charge (V = 4.5V) Q
GS g
nC
V = 30V, I = 20A
DD D
Gate-Source Charge Q 8.3
gs
11.8
Gate-Drain Charge Q
gd
5.7
Turn-On Delay Time t
D(ON)
Turn-On Rise Time t 5.0
R V = 30V, V = 10V,
DD GS
ns
Turn-Off Delay Time 15.6 R = 1, I = 20A
t g D
D(OFF)
Turn-Off Fall Time 3.4
t
F
Reverse Recovery Time 33 ns
t
RR
I = 20A, di/dt = 100A/s
F
Reverse Recovery Charge 33 nC
Q
RR
Notes: 5. Device mounted on an infinite heatsink.
6. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
September 2018
DMNH6008SCT
www.diodes.com Diodes Incorporated
Document number: DS38138 Rev. 4 - 2