DMPH4015SSSQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature I D BV R DSS DS(ON) Max Environments T = +25C A 100% Unclamped Inductive Switch (UIS) Test in Production Low -11.4A 11m V = -10V GS On-Resistance -40V Low Input Capacitance -9.8A 15m V = -4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The DMPH4015SSSQ is suitable for automotive applications requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. DMPH4015SSSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -11.4 A A Continuous Drain Current (Note 6) V = -10V I GS D State -8.1 T = +100C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -85 A I DM Maximum Body Diode Continuous Current (Note 6) -3 A I S Avalanche Current L = 1mH I -22 A AS Avalanche Energy L = 1mH E 260 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.4 W P D Thermal Resistance, Junction to Ambient (Note 5) 90 C/W R JA Total Power Dissipation (Note 6) P 1.8 W D Thermal Resistance, Junction to Ambient (Note 6) R 70 C/W JA Thermal Resistance, Junction to Case (Note 6) R 7.0 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -40 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -40V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1.5 -2.5 V V = V , I = -250A GS(TH) DS GS D 9 11 V = -10V, I = -9.8A GS D Static Drain-Source On-Resistance m R DS(ON) 11 15 V = -4.5V, I = -9.8A GS D Forward Transfer Admittance 26 S Y V = -20V, I = -9.8A fs DS D Diode Forward Voltage -0.7 -1 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 4,234 C iss V = -20V, V = 0V DS GS Output Capacitance 1,036 pF C oss f = 1MHz Reverse Transfer Capacitance 526 C rss Gate Resistance 7.8 R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge (V = -4.5V) Q 42.7 GS g Total Gate Charge (V = -10V) Q 91 GS g nC V = -20V, I = -9.8A DS D Gate-Source Charge Q 14.2 gs Gate-Drain Charge Q 13.5 gd Turn-On Delay Time 13.2 tD(ON) Turn-On Rise Time 10 t V = -10V, V = -20V, R = 6, R GS DD G ns Turn-Off Delay Time 303 I = -1A, R = 20 t D L D(OFF) Turn-Off Fall Time 138 t F Reverse Recovery Time 26 ns t I = -9.8A, di/dt = -100A/s RR F Reverse Recovery Charge 20 nC Q I = -9.8A, di/dt = -100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 March 2021 DMPH4015SSSQ Diodes Incorporated www.diodes.com Document number: DS39086 Rev. 3 - 2 NEW PRODUCT