STL17N3LLH6 N-channel 30 V, 0.0038 typ., 17 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 3.3 x 3.3 package Datasheet - production data Features Order code V R max. I DS DS(on) D (1) STL17N3LLH6 30 V 0.0045 17 A 1. The value is rated according R thj-pcb. 1 R * Q industry benchmark DS(on) g 2 3 4 Extremely low on-resistance R DS(on) High avalanche ruggedness PowerFLAT 3.3 x 3.3 Low gate drive power losses Very low switching gate charge Applications Figure 1. Internal schematic diagram Switching applications D(5, 6, 7, 8) 6 5 8 7 Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate G(4) structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) S(1, 2, 3) 12 3 4 AM15810v1 Table 1. Device summary Order code Marking Package Packaging STL17N3LLH6 17N3L PowerFLAT 3.3 x 3.3 Tape and reel June 2013 DocID15535 Rev 4 1/14 This is information on a product in full production. www.st.com 14Contents STL17N3LLH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 DocID15535 Rev 4