STL100N10F7 N-channel 100 V, 0.0062 typ., 19 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features R DS(on) Order code V I P DSS D TOT max 1 STL100N10F7 100 V 0.0073 19 A 5 W 2 3 4 Ultra low on-resistance PowerFLAT 5x6 100% avalanche tested Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET D(5, 6, 7, 8) th 8 7 6 5 developed using the 7 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) G(4) 12 3 4 Top View S(1, 2, 3) AM15540v2 Table 1. Device summary Order code Marking Package Packaging STL100N10F7 100N10F7 PowerFLAT 5x6 Tape and reel July 2013 DocID023656 Rev 4 1/16 This is information on a product in full production. www.st.com 16Contents STL100N10F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID023656 Rev 4
