STI57N65M5 STMicroelectronics

STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET in IPAK, TO-220, TO-220FP and DPAK packages Datasheet production data Features TAB V R DSS DS(on) Order codes I D T max Jmax 3 1 3 STB57N65M5 2 1 DPAK STF57N65M5 TO-220FP 710 V < 0.063 42 A STI57N65M5 TAB TAB STP57N65M5 Worldwide best R *area amongst the DS(on) silicon based devices 3 2 3 1 2 Higher V rating, high dv/dt capability 1 DSS IPAK TO-220 Excellent switching performance Easy to drive, 100% avalanche tested Figure 1. Internal schematic diagram Applications 4 Switching applications Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The 3 resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially - V suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Packages Packaging STB57N65M5 DPAK Tape and reel STF57N65M5 TO-220FP Tube 57N65M5 STI57N65M5 IPAK Tube STP57N65M5 TO-220 Tube December 2012 Doc ID 022849 Rev 4 1/22 This is information on a product in full production. www.st.com 22Contents STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 22 6 Revision history . 24 2/22 Doc ID 022849 Rev 4