STI34N65M5 STMicroelectronics

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs 2 2 in D PAK, I PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order codes V T R max I 2 DS Jmax DS(on) D 3 1 3 2 1 STB34N65M5 2 D PAK 2 I PAK STI34N65M5 710 V 0.11 28 A TAB STP34N65M5 STW34N65M5 Worldwide best R * area DS(on) 3 3 2 2 1 Higher V rating and high dv/dt capability DSS 1 TO-220 TO-247 Excellent switching performance 100% avalanche tested Figure 1. Internal schematic diagram Applications Switching applications Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The 3 resulting product has extremely low on- resistance, which is unmatched among silicon- - V based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Packages Packaging 2 STB34N65M5 D PAK Tape and reel 2 STI34N65M5 I PAK 34N65M5 STP34N65M5 TO-220 Tube STW34N65M5 TO-247 October 2013 DocID022853 Rev 3 1/22 This is information on a product in full production. www.st.comContents STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 19 6 Revision history . 21 2/22 DocID022853 Rev 3