STI4N62K3 STMicroelectronics

STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 and IPAK packages Datasheet production data Features TAB Order codes V R max I P DSS DS(on) D TOT 3 STF4N62K3 25 W 3 2 2 1 1 STFI4N62K3 25 W TO-220FP IPAK STI4N62K3 620 V < 2 3.8 A 70 W TAB STP4N62K3 70 W 1 STU4N62K3 70 W 2 3 TAB IPAKFP 100% avalanche tested 3 3 2 Extremely high dv/dt capability 2 1 1 TO-220 Gate charge minimized IPAK Very low intrinsic capacitance Figure 1. Internal schematic diagram Improved diode reverse recovery characteristics D(2,TAB) Zener-protected Applications Switching applications G(1) Description These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, S(3) combined with a new optimized vertical structure. AM01476v1 These devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STF4N62K3 TO-220FP STFI4N62K3 IPAKFP STI4N62K3 4N62K3 IPAK Tube STP4N62K3 TO-220 STU4N62K3 IPAK August 2012 Doc ID 17548 Rev 4 1/19 This is information on a product in full production. www.st.com 19Contents STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 18 2/19 Doc ID 17548 Rev 4