X-On Electronics has gained recognition as a prominent supplier of STI6N80K5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STI6N80K5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STI6N80K5 STMicroelectronics

STI6N80K5 electronic component of STMicroelectronics
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Part No.STI6N80K5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET
Datasheet: STI6N80K5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4942 ea
Line Total: USD 1.49 
Availability - 9
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 1.4942
10 : USD 1.2747
50 : USD 1.1527
100 : USD 1.0152
500 : USD 0.9542
1000 : USD 0.9274
2000 : USD 0.9161

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
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We are delighted to provide the STI6N80K5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STI6N80K5 and other electronic components in the MOSFETs category and beyond.

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STB6N80K5, STD6N80K5 STI6N80K5, STP6N80K5 Datasheet N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5 Power MOSFETs in DPAK, DPAK, IPAK and TO-220 packages TAB TAB Features 3 2 2 1 3 V R max. I P Order codes 1 DS DS(on) D TOT DPAK 2 D PAK STB6N80K5 TAB TAB STD6N80K5 800 V 1.6 4.5 A 85 W STI6N80K5 3 3 2 2 1 1 TO-220 STP6N80K5 IPAK Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) D(2, TAB) Ultra-low gate charge 100% avalanche tested Zener-protected G(1) Applications S(3) Switching applications NG1D2TS3Z Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status links STB6N80K5 STD6N80K5 STI6N80K5 STP6N80K5 DS9676 - Rev 4 - December 2021 www.st.com For further information contact your local STMicroelectronics sales office.STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 4.5 C I A D Drain current (continuous) at T = 100 C 2.8 C (1) I Drain current (pulsed) 18 A DM P Total power dissipation at T = 25 C 85 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. 2. I 4.5 A, di/dt=100 A/s V (peak) < V , V = 80% V . SD DS (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter 2 2 DPAK TO-220 Unit D PAK I PAK R Thermal resistance, junction-to-case 1.47 thJC R Thermal resistance, junction-to-ambient 62.50 C/W thJA (1) R Thermal resistance, junction-to-board 30 50 thJB 1. When mounted on an 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 1.5 A AR (2) E Single pulse avalanche energy 85 mJ AS 1. Pulse width limited by T max. J 2. Starting T = 25 C, I = I , V = 50 V. J D AR DD DS9676 - Rev 4 page 2/32

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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