X-On Electronics has gained recognition as a prominent supplier of STL100N8F7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STL100N8F7 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STL100N8F7 STMicroelectronics

STL100N8F7 electronic component of STMicroelectronics
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Part No.STL100N8F7
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 80 V, 5.2 mOhm typ., 100 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
Datasheet: STL100N8F7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.0628 ea
Line Total: USD 2.06 
Availability - 4
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 2.0628
10 : USD 2.0094
30 : USD 1.9732
100 : USD 1.9369

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the STL100N8F7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STL100N8F7 and other electronic components in the MOSFETs category and beyond.

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STL100N8F7 Datasheet N-channel 80 V, 5.2 m typ., 100 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features V R max I P Order code DS DS(on) D TOT STL100N8F7 80 V 6.1 m 100 A 120 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss PowerFLAT 5x6 High avalanche ruggedness D(5, 6, 7, 8) 8 7 6 5 Applications Switching applications G(4) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced 1 2 3 4 trench gate structure that results in very low on-state resistance, while also reducing Top View S(1, 2, 3) internal capacitance and gate charge for faster and more efficient switching. NG4D5678S123 Product status link STL100N8F7 Product summary Order code STL100N8F7 Marking 100N8F7 Package PowerFLAT 5x6 Packing Tape and reel DS10666 - Rev 4 - November 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL100N8F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 80 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C 100 A c D (1) I Drain current (continuous) at T = 100 C 71 A C D (2) (1) I Drain current (pulsed) 400 A DM (3) Drain current (continuous) at T = 25 C I 20 A D pcb (3) Drain current (continuous) at T = 100 C I 14 A D pcb (3) (2) I Drain current (pulsed) 80 A DM (1) P Total power dissipation at T = 25 C 120 W TOT C (3) P Total power dissipation at T = 25 C 4.8 W TOT pcb (4) E Single pulse avalanche energy 220 mJ AS T Operating junction temperature range C J -55 to 175 T Storage temperature range C stg 1. This value is rated according to R . thj-c 2. Pulse width limited by safe operating area. 3. This value is rated according to R . thj-pcb 4. Starting T =25 C, I =25 A, V =40 V J D DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.25 C/W thj-case (1) R Thermal resistance junction-pcb 31.3 C/W thj-pcb 1. When mounted on FR-4 board of 1inch, 2oz Cu, t < 10 s. DS10666 - Rev 4 page 2/18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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