STI47N60DM6AG STMicroelectronics

STI47N60DM6AG Datasheet Automotive-grade N-channel 600 V, 70 m typ., 36 A MDmesh DM6 Power MOSFET in an IPAK package Features TAB V R max. I Order code DS DS(on) D STI47N60DM6AG 600 V 80 m 36 A 3 AEC-Q101 qualified 2 1 Fast-recovery body diode Lower R per area vs previous generation IPAK DS(on) Low gate charge, input capacitance and resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STI47N60DM6AG Product summary Order code STI47N60DM6AG Marking 47N60DM6 Package IPAK Packing Tube DS12101 - Rev 3 - March 2019 www.st.com For further information contact your local STMicroelectronics sales office.STI47N60DM6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 36 A D C I Drain current (continuous) at T = 100 C 23 A D C (1) I Drain current (pulsed) 137 A D P Total power dissipation at T = 25 C 250 W TOT C (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) dv/dt MOSFET dv/dt ruggedness 100 T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area 2. I 36 A, di/dt 800 A/s, V < V , V = 480 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 thj-case C/W R Thermal resistance junction-amb 62.5 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 7 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 700 mJ AS (starting T = 25C, I = I , V = 100 V) j D AR DD DS12101 - Rev 3 page 2/13