IPD50R1K4CEAUMA1 Infineon

IPD50R1K4CE, IPU50R1K4CE MOSFET DPAK IPAK 500V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and Drain offering the best cost down performance ratio available on the market. Pin 2 Gate Features Pin 1 Extremely low losses due to very low FOM Rdson*Qg and Eoss Source Very high commutation ruggedness Pin 3 Easy to use/drive Pb-free plating, Halogen free mold compound Qualified for standard grade applications Applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended Table 1 Key Performance Parameters Parameter Value Unit V T 550 V DS j,max R 1.4 DS(on),max I 4.8 A D Q 8.2 nC g.typ I 8.8 A D,pulse Eoss 400V 0.79 J Type / Ordering Code Package Marking Related Links IPD50R1K4CE PG-TO 252 50S1K4CE see Appendix A IPU50R1K4CE PG-TO 251 Final Data Sheet 1 Rev. 2.4, 2016-06-13500V CoolMOS CE Power Transistor IPD50R1K4CE, IPU50R1K4CE Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Test Circuits . 10 Package Outlines . 11 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.4, 2016-06-13