Green DMN60H3D5SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R DSS DS(ON) Max High BV Rating for Power Application T = +25C DSS C 600V 2.8A Low Input/Output Leakage 3.5 V = 10V GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation complementary MOSFET features low on- Mechanical Data resistance and fast switching, making it ideal for high efficiency power Case: TO252 (DPAK) (Type TH) management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram Motor Control Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.33 grams (Approximate) DC-DC Converters Power Management Functions D TO252 (DPAK) (Type TH) D G S Top View Top View Internal Schematic Pin Out Ordering Information (Note 4) Part Number Case Packaging DMN60H3D5SK3-13 TO252 (DPAK) (Type TH) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN60H3D5SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 600 V DSS Gate-Source Voltage V 30 V GSS Steady T = +25C 2.8 C Continuous Drain Current (Note 5) V = 10V I A GS D State 1.8 T = +100C C Maximum Body Diode Forward Current (Note 5) 2.5 A I S 4.4 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I DM Avalanche Current, L = 60mH (Note 7) 1.0 A I AS Avalanche Energy, L = 60mH (Note 7) 30 mJ E AS Peak Diode Recovery dv/dt (V = 400V, I = 2.7A) dv/dt 2.7 V/ns DD D Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 41 T = +25C C Total Power Dissipation (Note 5) P W D 16 T = +100C C Thermal Resistance, Junction to Ambient (Note 6) R 46 JA C/W Thermal Resistance, Junction to Case (Note 5) 3.0 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 600 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 600V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 30V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 2.0 3.1 4.0 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 2.7 3.5 V = 10V, I = 1.5A DS(ON) GS D Diode Forward Voltage V 0.9 1.5 V V = 0V, I = 3.0A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 354 iss Output Capacitance C 41 pF V = 25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance 4 Crss Gate Resistance 2.6 R V = 0V, V = 0V, f = 1.0MHz G DS GS 12.6 Total Gate Charge (V = 10V) Q GS g Gate-Source Charge 1.7 nC Q V = 480V, I = 2.5A gs DS D Gate-Drain Charge 7.1 Q gd Turn-On Delay Time t 10.6 D(ON) Turn-On Rise Time t 22 R VGS = 10V , VDD = 300V, RG = 25, ns Turn-Off Delay Time t 34 I = 2.5A D(OFF) D Turn-Off Fall Time t 28 F Body Diode Reverse Recovery Time 198 ns tRR V = 0V, I = 2.5A, dI/dt = 100A/s GS S Body Diode Reverse Recovery Charge 952 nC Q RR Notes: 5. Device mounted on infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. 2 of 7 DMN60H3D5SK3 January 2017 Diodes Incorporated www.diodes.com Document number: DS37884 Rev. 2 - 2 NEW PRODUCT ADVANCED INFORMATION