STI30N65M5 STMicroelectronics

STB30N65M5, STF30N65M5, STI30N65M5 STP30N65M5, STW30N65M5 N-channel 650 V, 0.125 , 22 A, MDmesh V Power MOSFET DPAK, TO-220FP, IPAK, TO-220, TO-247 Features V DSS Order codes R max. I DS(on) D T 3 JMAX 3 1 2 3 1 2 STB30N65M5 710 V < 0.139 22 A 1 DPAK IPAK (1) STF30N65M5 710 V < 0.139 22 A TO-220FP STI30N65M5 710 V < 0.139 22 A STP30N65M5 710 V < 0.139 22 A STW30N65M5 710 V < 0.139 22 A 1. Limited only by maximum temperature allowed 3 3 2 2 1 1 Worldwide best R *area DS(on) TO-220 TO-247 Higher V rating DSS Excellent switching performance Easy to drive Figure 1. Internal schematic diagram 100% avalanche tested High dv/dt capability Applications Switching applications Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative 3 proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The - V resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging STB30N65M5 30N65M5 DPAK Tape and reel STF30N65M5 30N65M5 TO-220FP Tube STI30N65M5 30N65M5 IPAK Tube STP30N65M5 30N65M5 TO-220 Tube STW30N65M5 30N65M5 TO-247 Tube September 2011 Doc ID 15331 Rev 3 1/22 www.st.com 22Contents STB/F/I/P/W30N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 19 6 Revision history . 21 2/22 Doc ID 15331 Rev 3