STI33N60M2 STMicroelectronics

STF33N60M2, STI33N60M2 STP33N60M2, STW33N60M2 Datasheet N-channel 600 V, 0.108 typ., 26 A, MDmesh M2 Power MOSFETs 2 in TO220FP, I PAK, TO-220 and TO-247 packages TAB Features V T R max. I Order codes Package DS Jmax DS(on) D 3 2 3 1 STF33N60M2 TO-220FP 2 1 2 TO-220FP I PAK STI33N60M2 IPAK 650 V 0.125 26 A TAB STP33N60M2 TO-220 STW33N60M2 TO-247 3 Extremely low gate charge 2 1 Excellent output capacitance (C ) profile TO-220 TO-247 OSS 100% avalanche tested ( ) D 2, TAB Zener-protected Applications G ( 1 ) Switching applications LLC converters, resonant converters S ( 3 ) AM15572V1 Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STF33N60M2 STI33N60M2 STP33N60M2 STW33N60M2 DS9497 - Rev 3 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 I PAK, TO-220, TO-220FP TO-247 V Gate-source voltage 25 V GS (1) Drain current (continuous) at T = 25 C 26 26 A C I D (1) Drain current (continuous) at T = 100 C 16 16 A C (2) (1) I Drain current (pulsed) 104 104 A DM P Total power dissipation at T = 25 C 35 190 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 V/ns Insulation withstand voltage (RMS) from all three V leads to external heat sink 2500 V ISO (t = 1 s, T = 25 C) C T Storage temperature range stg -50 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature. 2. Pulse width is limited by safe operating area. 3. I 26 A, di/dt 400 A/s, V < V , V = 400 V SD DS peak (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Value 2 Symbol Parameter Unit I PAK TO-220FP TO-247 TO-220 R Thermal resistance junction-case 3.6 0.66 C/W thj-case R Thermal resistance junction-ambient 62.5 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 450 mJ AS j D AR DD DS9497 - Rev 3 page 2/20